News about laser diodes

Displaying 51-100 of 720 results.

1550-nm InGaAsP multi-quantum-well structures selectively grown on v-groove-patterned SOI substrates

AIP Publishing
Date: Jul, 2017
1550-nm InGaAsP multi-quantum-well structures selectively grown on v-groove-patterned SOI substrates

We report direct growth of 1550-nm InGaAsP multi-quantum-well (MQW) structures in densely packed, s…


The experimental evidence of the amplified spontaneous emission of Yb3+ ions in LiYbF4 crystal

ScienceDirect
Date: Jul, 2017
The experimental evidence of the amplified spontaneous emission of Yb3+ ions in LiYbF4 crystal

The experimental evidence of the amplified spontaneous emission of Yb3+ ions in LiYbF4 crystal, whi…

Application: Others,Fiber Laser

Low frequency noise investigation of 2–3 μm GaSb-based laser diodes

ScienceDirect
Date: Jul, 2017
Low frequency noise investigation of 2–3 μm GaSb-based laser diodes

A detailed noise study of mid-infrared 2–3 μm wavelenght GaSb-based type-I ridge-waveguide laser di…

Application: Others,Sensor

Examination of thermal properties and degradation of InGaN - based diode lasers by thermoreflectance spectroscopy and focused ion beam etching

AIP Publishing
Date: Jul, 2017
Examination of thermal properties and degradation of InGaN - based diode lasers by thermoreflectance spectroscopy and focused ion beam etching

In this paper, thermal properties of InGaN-based diode lasers are investigated. The thermoreflectan…

Application: Others,Sensor

Beam Quality Deterioration in Dense Wavelength Beam-Combined Broad-Area Diode Lasers

IEEE
Date: Jan 1, 1970
Beam Quality Deterioration in Dense Wavelength Beam-Combined Broad-Area Diode Lasers

We study various effects of beam quality deterioration in dense wavelength beam-combined direct dio…

Manufacturer: TRUMPF Inc.
Application: Others,Processing

Generation of flat wideband chaos with suppressed time delay signature by using optical time lens

OSA Publishing
Date: Jun 26, 2017
Generation of flat wideband chaos with suppressed time delay signature by using optical time lens

We propose a flat wideband chaos generation scheme that shows excellent time delay signature suppre…

Application: Others

New Medical 1270nm Wavelength debuts at 2017 World of Photonics

SEMINEX CORPORATION
Date: Jun 26, 2017
New Medical 1270nm Wavelength debuts at 2017 World of Photonics

PEABODY, MASS., JUNE 26, 2017 - SemiNex Corporation debuts its new 1270nm laser wavelength at this …

Manufacturer: Seminex Corp.
Application: Others,Biology

S-band Q-switched thulium fluoride fiber laser using graphene saturable absorber

IOPscience
Date: Jun 26, 2017
S-band Q-switched thulium fluoride fiber laser using graphene saturable absorber

A Q-switched S-band thulium fluoride fiber (TFF) driven by a 1400 nm laser diode is proposed and de…

Application: Others,Fiber Laser

Dual-wavelength synchronously mode-locked Nd:LaGGG laser operating at 1.3 μm with a SESAM

Royal Society of Chemistry
Date: Jun 23, 2017
Dual-wavelength synchronously mode-locked Nd:LaGGG laser operating at 1.3 μm with a SESAM

We have demonstrated a diode-end-pumped synchronously dual-wavelength mode-locked Nd3+:(La0.1Gd0.9)…

Application: Others,Sensor,Telecom

Optically controllable dual-mode switching in single-mode Fabry-Pérot laser diode subject to one side-mode feedback and external single mode injection

ScienceDirect
Date: Jun, 2017
Optically controllable dual-mode switching in single-mode Fabry-Pérot laser diode subject to one side-mode feedback and external single mode injection

In this paper, broadly tunable dual-mode lasing system is presented and demonstrated based on singl…

Application: Others

Influence of the organic film thickness on the second order distributed feedback resonator properties of an organic semiconductor laser

AIP Publishing
Date: Jun, 2017
Influence of the organic film thickness on the second order distributed feedback resonator properties of an organic semiconductor laser

We report on the cavity numerical characterization of a second order one-dimensional distributed fe…

Application: Others,Sensor,Telecom

Impact of longitudinal refractive index change on the near-field width of high-power broad-area diode lasers

AIP Publishing
Date: Jun, 2017
Impact of longitudinal refractive index change on the near-field width of high-power broad-area diode lasers

Typical for broad-area laser (BAL) diodes operating in a continuous-wave mode is a narrowing of the…

Manufacturer: TRUMPF Inc.
Application: Others,Processing

S-band Q-switched thulium fluoride fiber laser using graphene saturable absorber

IOPscience
Date: Jun, 2017
S-band Q-switched thulium fluoride fiber laser using graphene saturable absorber

A Q-switched S-band thulium fluoride fiber (TFF) driven by a 1400 nm laser diode is proposed and de…

Application: Others,Fiber Laser

Photonic integrated circuit based on 1x2 multimode-interferometer-Fabry-Perot laser diode

SPIE
Date: May 30, 2017
Photonic integrated circuit based on 1x2 multimode-interferometer-Fabry-Perot laser diode

In this paper, we demonstrate a regrowth-free monolithically integrated photonics circuit which con…

Application: Others,Sensor

Automated method for wavelength estimation in a two-beam interferometer based on the on–off switching of two laser-diode sources

IOPscience
Date: May 19, 2017
Automated method for wavelength estimation in a two-beam interferometer based on the on–off switching of two laser-diode sources

In this manuscript a method is proposed to estimate the wavelength of a laser diode source, under t…

Application: Others

High-resolution investigation of longitudinal modes of a GaN-based blue laser diode

SPIE
Date: May 16, 2017
High-resolution investigation of longitudinal modes of a GaN-based blue laser diode

Typical emission spectra of GaN-based blue laser diodes are known to have irregular shapes. Hence, …

Application: Others,Processing

1.5 μm Laser Diode on InP/Si substrate by Epitaxial Growth using Direct Bonding Method

OSA Publishing
Date: May 14, 2017
1.5 μm Laser Diode on InP/Si substrate by Epitaxial Growth using Direct Bonding Method

we have demonstrated for the first time 1.5μm GaInAsP laser diode on silicon substrate using direct…

Application: Others,Telecom

Micro-Integrated Extended Cavity Diode Laser with Integrated Optical Amplifier for Applications in Space

OSA Publishing
Date: May 14, 2017
Micro-Integrated Extended Cavity Diode Laser with Integrated Optical Amplifier for Applications in Space

We present a micro-integrated laser module consisting of an extended cavity diode laser and an opti…

Application: Others,Sensor

Differential Frequency Tunable Dual-Mode Heterogeneous QD Laser with Si PIC

OSA Publishing
Date: May 14, 2017
Differential Frequency Tunable Dual-Mode Heterogeneous QD Laser with Si PIC

We proposed a tunable dual-mode heterogeneous quantum dot laser diode with a Si-photonics-based pho…

Application: Others,Processing

Model for Frequency Comb Generation in Single-Section Quantum Well Diode Lasers

OSA Publishing
Date: May 14, 2017
Model for Frequency Comb Generation in Single-Section Quantum Well Diode Lasers

We present a new, traveling-wave model for single-section quantum well diode lasers. We find that s…

Application: Others,Sensor

Ultrafast Diode Laser with Self-Adapting Pulse-Shaping in Passive, Active and Hybrid Mode-Locking Operation

OSA Publishing
Date: May 14, 2017
Ultrafast Diode Laser with Self-Adapting Pulse-Shaping in Passive, Active and Hybrid Mode-Locking Operation

We present an ultrafast edge-emitting diode laser system, which is able to self-adapt the resonator…

Application: Others

Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III-V Semiconductor Laser

OSA Publishing
Date: May 14, 2017
Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III-V Semiconductor Laser

We demonstrate a narrow-linewidth heterogeneously integrated silicon/III-V laser based on the oxide…

Application: Others

Diode laser annealing of epitaxy Ge on sapphire (0 0 0 1) grown by magnetron sputtering

ScienceDirect
Date: May 11, 2017
Diode laser annealing of epitaxy Ge on sapphire (0 0 0 1) grown by magnetron sputtering

In this work, magnetron sputtering was used to epitaxially grow Ge films on sapphire at low tempera…

Application: Others,Processing

DFB lasers with apodized surface gratings for wavelength stabilization and high efficiency

IOPscience
Date: May 5, 2017
DFB lasers with apodized surface gratings for wavelength stabilization and high efficiency

We present results of GaAs-based distributed-feedback (DFB) broad-area (BA) lasers with integrated …

Application: Others,Sensor

Development and characterization of a laboratory setup for photoacoustic NO2 determination based on the excitation of electronic 2B2 and 2B1 states using a low-cost semiconductor laser

ScienceDirect
Date: May 1, 2017
Development and characterization of a laboratory setup for photoacoustic NO2 determination based on the excitation of electronic 2B2 and 2B1 states using a low-cost semiconductor laser

This work gives a detailed characterization of a laboratory setup for photoacoustic NO2 trace gas d…

Application: Others,Sensor

A robust red-emitting phosphor-in-glass (PiG) for use in white lighting sources pumped by blue laser diodes

ScienceDirect
Date: Apr 25, 2017
A robust red-emitting phosphor-in-glass (PiG) for use in white lighting sources pumped by blue laser diodes

A red-emitting phosphor-in-glass (PiG) material was synthesized by dispersing CaAlSiN3:Eu2+ phospho…

Application: Others,Projector

Optical gain in GaAsBi-based quantum-well diode lasers (Conference Presentation)

SPIE
Date: Apr 21, 2017
Optical gain in GaAsBi-based quantum-well diode lasers (Conference Presentation)

GaAsBi offers the possibility to develop near-IR semiconductor lasers such that the spin-orbit-spli…

Application: Others,Sensor,Telecom

100μJ-level single frequency linearly-polarized nanosecond pulsed laser at 775 nm (Conference Presentation)

SPIE
Date: Apr 21, 2017
100μJ-level single frequency linearly-polarized nanosecond pulsed laser at 775 nm (Conference Presentation)

We report a single frequency, linearly polarized, near diffraction-limited, pulsed laser source at …

Application: Others,Fiber Laser

Direct measurement of the 2D gain profile in a tapered semiconductor laser (Conference Presentation)

SPIE
Date: Apr 21, 2017
Direct measurement of the 2D gain profile in a tapered semiconductor laser (Conference Presentation)

Single mode tapered semiconductor lasers producing watt-class output powers often suffer from beam …

Application: Others,Sensor

Common-signal-induced synchronization in semiconductor lasers with broadband optical noise signal

IEEE
Date: Apr 4, 2017
Common-signal-induced synchronization in semiconductor lasers with broadband optical noise signal

We experimentally observe common-signal-induced synchronization between two semiconductor lasers dr…

Application: Others,Security,Telecom

Dynamic performance of detuned ridge waveguide AlInGaAs distributed feedback laser diodes

Wiley Online Library
Date: Mar 30, 2017
Dynamic performance of detuned ridge waveguide AlInGaAs distributed feedback laser diodes

The dynamic behavior of AlInGaAs ridge waveguide distributed feedback lasers is reported in this wo…

Application: Others,Telecom

Effect of Bias Current on Complexity and Time Delay Signature of Chaos in Semiconductor Laser with Time-Delayed Optical Feedback

IEEE
Date: Mar 29, 2017
Effect of Bias Current on Complexity and Time Delay Signature of Chaos in Semiconductor Laser with Time-Delayed Optical Feedback

The effect of bias current on the complexity and time-delay signature of chaotic signals in semicon…

Application: Others,Telecom,Security

Intensity noise limit in a phase-sensitive optical time-domain reflectometer with a semiconductor laser source

IOPscience
Date: Mar 28, 2017
Intensity noise limit in a phase-sensitive optical time-domain reflectometer with a semiconductor laser source

In the present paper we perform, for the first time, the analysis of the average intensity noise po…

Application: Others,Sensor

Design and Realization of a Miniaturized DFB Diode Laser-Based SHG Light Source With a 2-nm Tunable Emission at 488 nm

IEEE
Date: Mar 28, 2017
Design and Realization of a Miniaturized DFB Diode Laser-Based SHG Light Source With a 2-nm Tunable Emission at 488 nm

We present a concept and the realization of a diode laser-based second harmonic generation (SHG) li…

Application: Others,Sensor

Electrical and carrier transport properties of the Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode with rare-earth oxide interlayer

springer.com
Date: Mar 27, 2017
Electrical and carrier transport properties of the Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode with rare-earth oxide interlayer

The electrical and transport properties of rare-earth Y2O3 on n-type GaN with Au electrode have bee…

Application: Others

Numerical Study of Transient Oscillation in Gain-Switched InGaN-Based Laser Diodes

IEEE
Date: Mar 27, 2017
Numerical Study of Transient Oscillation in Gain-Switched InGaN-Based Laser Diodes

The pulse working of gain-switched laser diodes (LDs) provides more power than continuous-wave (CW)…


Yellow laser emission at 578 nm by frequency doubling with diode lasers of high radiance at 1156 nm

springer.com
Date: Mar 25, 2017
Yellow laser emission at 578 nm by frequency doubling with diode lasers of high radiance at 1156 nm

For the first time, we demonstrate diode lasers consisting of a single quantum-well, which emit at …

Application: Others,Projector

Electro-optical characteristics of 808 nm ridge-waveguide lasers operated with high-current nanosecond pulses

IOPscience
Date: Mar 24, 2017
Electro-optical characteristics of 808 nm ridge-waveguide lasers operated with high-current nanosecond pulses

The aim of this paper is to present detailed experimental and theoretical investigations of the beh…

Application: Others

Cascade Pumping of 1.9 - 3.3 µm Type-I Quantum Well GaSb-based Diode Lasers

IEEE
Date: Mar 24, 2017
Cascade Pumping of 1.9 - 3.3 µm Type-I Quantum Well GaSb-based Diode Lasers

Cascade pumping of type-I quantum well gain sections was utilized to increase output power and effi…

Application: Others,Sensor

Cost-effective optoacoustic system based on the combination of high-power diode lasers

SPIE
Date: Mar 22, 2017
Cost-effective optoacoustic system based on the combination of high-power diode lasers

One of the main issues of the advances in optoacoustic (OA) applications is to reduce the high cost…

Application: Others,DPSS Laser

Biostimulation with diode laser positively regulates cementoblast functions, in vitro

springer.com
Date: Mar 22, 2017
Biostimulation with diode laser positively regulates cementoblast functions, in vitro

The aim of this study was to evaluate the effects of diode laser biostimulation on cementoblasts (O…

Application: Others,Biology

LETTER SESAM combined Kerr lens mode locked Yb:CALGO laser pumped by a 1.2 W single mode fiber coupled laser diode

IOPscience
Date: Mar 22, 2017
LETTER SESAM combined Kerr lens mode locked Yb:CALGO laser pumped by a 1.2 W single mode fiber coupled laser diode

In this letter, we present a passively mode locked Yb:CALGO oscillator pumped by a 1.2 W single mod…

Application: Others,DPSS Laser

Silicon Photonic Wavelength Tunable Lasers for High-Capacity Optical Communication System

OSA Publishing
Date: Mar 19, 2017
Silicon Photonic Wavelength Tunable Lasers for High-Capacity Optical Communication System

Silicon photonic wavelength-tunable laser diodes consist of a wavelength-tunable filter with silico…

Application: Others,Telecom

56 Gb/s Electro-Absorption Modulation of a Heterogeneously Integrated InP-on-Si DFB Laser Diode

OSA Publishing
Date: Mar 19, 2017
56 Gb/s Electro-Absorption Modulation of a Heterogeneously Integrated InP-on-Si DFB Laser Diode

Electro-absorption modulation of a heterogeneously integrated InP/Si DFB laser is demonstrated by r…

Application: Others,Telecom

Dual-pumped nondegenerate four-wave mixing in semiconductor laser with a built-in external cavity

IOPscience
Date: Mar 17, 2017
Dual-pumped nondegenerate four-wave mixing in semiconductor laser with a built-in external cavity

In this paper, a semiconductor laser system consisting of a conventional multimode Fabry–Pérot lase…


Performance of Widely Tunable Multi-Quantum-Well and Bulk Laser Diodes and the Main Limiting Factors

IEEE
Date: Mar 15, 2017
Performance of Widely Tunable Multi-Quantum-Well and Bulk Laser Diodes and the Main Limiting Factors

The output power and tuning performance of multi-quantum-well (MQW) and bulk InGaAsP/InP-distribute…

Application: Others

Novel VECSEL for short-wave infrared Raman spectroscopy applications

Wiley Online Library
Date: Mar 7, 2017
Novel VECSEL for short-wave infrared Raman spectroscopy applications

Raman spectroscopy of pigmented samples can be problematic owing to strong laser-induced auto-fluor…

Application: Others,Biology,Sensor

Research on atmospheric CO2 remote sensing with open-path tunable diode laser absorption spectroscopy and comparison methods

SPIE
Date: Mar 7, 2017
Research on atmospheric CO2 remote sensing with open-path tunable diode laser absorption spectroscopy and comparison methods

An open-path atmospheric CO2CO2 measurement system was built based on tunable diode laser absorptio…

Application: Others,Sensor

Optical Gain in Type-II InAsN/GaSb Strained Quantum Wells Laser Diodes and Its Pressure Dependence

IEEE
Date: Mar 6, 2017
Optical Gain in Type-II InAsN/GaSb Strained Quantum Wells Laser Diodes and Its Pressure Dependence

In this work, we have reported theoretical analysis of the optical gain and its pressure dependence…

Application: Others,Sensor,Biology

Optoacoustic system based on 808-nm high energy short pulse diode laser stacks

SPIE
Date: Mar 3, 2017
Optoacoustic system based on 808-nm high energy short pulse diode laser stacks

In the last few decades, high power diode lasers (HPDL) have been introduced as alternative laser s…

Application: Others,Biology