News about laser diodes
Displaying 701-750 of 921 results.
APS JOURNALS
Date: Jun 5, 2015
We report experimental bifurcation diagrams of a semiconductor laser, biased well above threshold, …
springer.com
Date: Jun 5, 2015
The edge-emitting semiconductor laser powered by Sifeu et al. oscillator is studied numerically. An…
Taylor & Francis Group
Date: Jun 2, 2015
This paper reviews the various techniques employed in the circuit modelling of a semiconductor lase…
Phys.org
Date: Jun 2, 2015
Researchers at Tohoku University and the National Institute of Information and Communications Techn…
The Optoelectronics Company Ltd
Date: May 27, 2015
The Optoelectronics Company is delighted to introduce 2 new visible wavelength laser diodes from US…
IOPscience
Date: May 26, 2015
We report on the modeling, growth, processing, characterization and integration in a gas detection …
SPIE
Date: May 23, 2015
During the last decade, Optoacoustic Imaging (OAI), or Optoacoustic Tomography (OAT), has evolved a…
Seminex Corp.
Date: May 20, 2015
SemiNex Corporation will be giving its new 2CM module a European debut at this year’s World of Phot…
Wiley Online Library
Date: May 18, 2015
Shuji Nakamura discovered p-type doping in Gallium Nitride (GaN) and developed blue, green, and whi…
springer.com
Date: May 15, 2015
This study examines the capability to significantly suppress the frequency noise of a semiconductor…
springer.com
Date: May 14, 2015
Two concepts of dual-wavelength 785-nm DBR ridge waveguide (RW) lasers, i.e. RW mini-arrays consist…
Wiley Online Library
Date: May 13, 2015
We introduce numerical modeling of noise performance and distortion of semiconductor lasers subject…
SPIE
Date: May 12, 2015
We report a chaotic optical time-domain reflectometry for fiber fault location, where a chaotic pro…
SPIE
Date: May 12, 2015
High-energy class laser systems operating at high average power are destined to serve fundamental r…
IEEE
Date: May 11, 2015
The time domain response of high-speed avalanche photo detectors to an impulse resembling optical p…
springer.com
Date: May 7, 2015
Laser diode self-mixing interferometry, which is characterized by self-alignment, compactness, …
SPIE
Date: May 5, 2015
Temperature effects on the spectral lines of two Fabry-Perot GaN-based blue laser diodes obtained f…
SPIE
Date: May 5, 2015
The possibility of using semiconductor laser interferometers to measure displacements at the nanome…
SPIE
Date: May 5, 2015
High resolution spectral lines study is performed on the emissions of a blue laser diode as a funct…
SPIE
Date: May 4, 2015
We report near circular beam output from 808 nm edge-emitting diode lasers based on Bragg reflectio…
Date: May, 2015
Lumics GmbH - Berlin is re-setting the benchmark for
its LuOcean™ Mini series offering the current…
American Physical Society
Date: Apr 30, 2015
The classical problem of a semiconductor laser subject to polarized injection is revisited. Fr…
Wiley Online Library
Date: Apr 30, 2015
Although multiple lasers are now standard equipment on most modern flow cytometers, ultraviolet (UV…
AIP Publishing
Date: Apr 28, 2015
We studied the InGaN laser diode, emitting in the blue region of the spectrum and characterized&nbs…
AIP Publishing
Date: Apr 28, 2015
An operating semiconductor laser has been studied using a scanning probe microscope. A shift o…
Date: Apr 27, 2015
Necsel holds key patented technology to be the premium worldwide supplier of high power red, green …
AIP Publishing
Date: Apr 24, 2015
We have developed a laser system to generate frequency-chirped light at rapid modulation speeds (∼1…
Royal Society of Chemistry
Date: Apr 22, 2015
Electrically pumped random lasing based on an Au–ZnO nanowire Schottky junction diode is demonstrat…
Date: Apr 20, 2015
The 808nm pump wavelength has long been used for Nd:YAG diode-pumped solid state(DPSS) lasers. As t…
springer.com
Date: Apr 15, 2015
A comparative study of the electrical and optical characteristics of laser diodes based on GaAs and…
SPIE
Date: Apr 13, 2015
Based on the beam characteristics of semiconductor lasers, a new parameter for evaluating beam qual…
springer.com
Date: Apr 8, 2015
Light-current and current-voltage characteristics of a set of high-power laser diodes of the spectr…
Wiley Online Library
Date: Apr 8, 2015
We developed a compact, high luminance white light source based on nitride semiconductor blue laser…
IOPscience
Date: Apr 7, 2015
Rate equations analysis, supported by travelling wave simulations, is used to show that a diode las…
De Gruyter
Date: Apr 7, 2015
The effect of modifications in epi-side (top) gold metallization on a thermal performance and on po…
SPIE
Date: Apr 3, 2015
We demonstrate wavelength domain multiplexed (WDM) data transmission with a data rate of 14 Gbps ba…
SPIE
Date: Apr 1, 2015
We investigated a novel design concept of index-guided tapered LDs with linearly effective-refracti…
SPIE
Date: Apr 1, 2015
We describe a new coherent beam combining architecture based on passive phase-locking of two laser …
World Scientific Publishing Co Pte Ltd
Date: Mar 31, 2015
The performance characteristics of deep violet indium gallium nitride (InGaN) multiquantum well (MQ…
SPIE
Date: Mar 20, 2015
Recently, high-power broad-area laser diodes based on GaN with output powers beyond 1 W have become…
AIP Publishing
Date: Mar 17, 2015
We present a wavelength-tunable laser diode with a 99-nm-wide wavelength tuning range. It has …
IEEE
Date: Mar 15, 2015
Laser diodes with optical feedback can exhibit periodic intensity oscillations at or near the relax…
SPIE
Date: Mar 15, 2015
Mode-locked semiconductor laser technology is a promising technology candidate considered by Europe…
SPIE
Date: Mar 13, 2015
The recent development and refinement of Gallium nitride (GaN) semiconductor devices has produced b…
SPIE
Date: Mar 13, 2015
We report modeling and experimental results that demonstrate mechanisms limiting the output power o…
SPIE
Date: Mar 13, 2015
Substantial limitation of output power in AlGaInP based red broad area (BA) laser diode (LD) origin…
SPIE
Date: Mar 13, 2015
The catastrophic optical damage (COD) of laser diodes consists of the sudden drop off of the optica…
Date: Mar 12, 2015
OSI Laser Diode Introduces 1625 nm High-Power (350 mW,
typical), Pulsed Laser Diode Module fo…
SPIE
Date: Mar 10, 2015
The development of broad area laser diodes towards higher output power, efficiency and brightness i…
SPIE
Date: Mar 10, 2015
We present intra-cavity pulse shaping of external cavity mode-locked semiconductor lasers. In our a…
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