Dilute-Bismide Alloys for GaSb-based Mid-Infrared Semiconductor Lasers open site


Date: May 13, 2018
Dilute-Bismide Alloys for GaSb-based Mid-Infrared Semiconductor Lasers

Incorporation of bismuth into III-V emitters typically results in dramatically reduced luminescence efficiency. We present type-I dilute-bismide III-V quantum wells exhibiting enhanced photoluminescence near 4 Āµm, suggesting a viable route to extend diode laser emission.

Application: DPSS Laser,Others