AlGaAs-based optically pumped semiconductor lasers

The most technologically mature optically pumped semiconductor lasers (OPSL) are based on InGaAs quantum wells (QW) for emission in the 900-1200 nm range. The low wavelength boundary is set by both the bandgap of InGaAs and the most common pump wavelength of 808 nm. To extend the wavelength coverage into 700 – 900 nm, a different QW system and a different pump wavelength are needed. In this work, we present the progress and result in the development of AlGaAs-based OPSL.