InGaP/AlGaInP Quantum Well Discrete Mode Laser Diode Emitting at 689 nm open site


Date: Dec 13, 2017
InGaP/AlGaInP Quantum Well Discrete Mode Laser Diode Emitting at 689 nm

A discrete-mode laser diode, fabricated in the In0.6Ga0.4P/AlGaInP multiple quantum well system, emitting a single mode at λ=689 nm is reported. The laser has an ex-facet output power >10 mW at 30 °C and operates mode hop free in the temperature range 0 °C to 50 °C.

Manufacturer: Eblana Photonics Ltd.
Application: Others,Sensor