Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III-V Semiconductor Laser 
Date: May 14, 2017
We demonstrate a narrow-linewidth heterogeneously integrated silicon/III-V laser based on the oxide-confinement method. The laser achieves an output power of 4 mW and a linewidth of 28 kHz with a threshold current of 60 mA and a side mode suppression ratio of 50 dB at 1574 nm.
Application: Others