56 Gb/s Electro-Absorption Modulation of a Heterogeneously Integrated InP-on-Si DFB Laser Diode 
Date: Mar 19, 2017
Electro-absorption modulation of a heterogeneously integrated InP/Si DFB laser is demonstrated by reverse biasing the InP tapers, used to couple the light between the InP and the Si waveguides. Modulation at 56 Gb/s is demonstrated.