High power semiconductor laser arrays at 1120 nm open site


Date: Dec 5, 2016
High power semiconductor laser arrays at 1120 nm

Semiconductor laser arrays with a distinct number of ridge waveguides within a parallel geometry have been fabricated. Evanescently coupled supermodes with out-of-phase and in-phase characteristics are revealed by respective multi- and single-lobed farfield emission. Output powers of P = 400 mW have been measured at T = 10 °C.

Application: Others,Biology,Sensor