The study of temperature effect on the performance characteristics of the InGaN-based vertical cavity surface emitting laser (VCSEL) by solving the rate equations

The use of semiconductor lasers is beneficial in long-distance communications. Practical communication systems based on these lasers need high ambient temperature, with temperature changes between 40∘40∘C and 85∘85∘C. The study of the temperature-dependent response of these lasers is important to improve them. This study investigates the effect of temperature on InGaN-based vertical cavity surface emitting lasers (VCSEL). The active region in this structure includes a single quantum well (SQW). The rate equations of carriers and densities are numerically solved. The time variations of carrier density, photon density and output power (NN, SS and PP) at 25∘25∘C and the current injection of 0.04 A are obtained. Values obtained for threshold current and output power include 7 mA and 44 mW, respectively. The effect of temperature on the time variations of NN, SS and PP from 10∘10∘C to 35∘35∘C is studied. Results show that these parameters decrease and the threshold current increases with an increase in temperature. Furthermore, the investigation of the effect of injection current on NN, SS and PP shows that raising the injection current can increase these parameters. Moreover, an increase in the injection current reduces the time response.