High-speed performance of III-nitride 410 nm ridge laser diode on (202̄1̄) plane for visible light communication

The modulation characteristics of high-performance In0.1Ga0.9N/GaN continuous-wave (CW) ridge laser diode were demonstrated. The laser epitaxial structure was grown on (202̅1̅) by metal organic chemical vapor deposition (MOCVD) for high-power CW operation by adopting low-resistance top-side n-type contact design. The threshold current density of 1200 μm long and 3 μm wide cavity was 6.1 kA/cm2 in CW. Measured slope efficiency of the resonance frequency was 0.3268 GHz/mA1/2 and calculated differential gain was 2.2 × 10-16 cm2. 4.3 GHz of -3 dB bandwidth were obtained and the 10.2 GHz of maximum intrinsic bandwidth have been calculated from the damping factor. 5 Gbit/s data rate was measured by large signal modulation.