Modeling and Simulations of Edge-Emitting Broad-Area Semiconductor Lasers and Amplifiers

A (2+1)-dimensional partial differential equation model describing spatial-lateral dynamics of edge-emitting broad-area semiconductor devices is considered. A numerical scheme based on a split-step Fourier method is implemented on a parallel computing cluster. Numerical integration of the model equations is used for optimizing of existing devices with respect to the emitted beam quality, as well as for creating and testing of novel device design concepts.