808 nm 10 W FP Laser Diode « K808F02MN-10.00W »

Manufacturer :

BWT Beijing Ltd.

Series :

K808F02MN

Model :

K808F02MN-10.00W

Code:

P964

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Summary

High Power NIR Laser Diode - K808F02MN-10.00W has the following features: Wavelength is 808 nm, Output Power is 10 W, FP Laser Diode, Module, and more.

Features

Type (*) is FP Laser Diode
Package (*) is Module
Wavelength (*) is 808 nm ± 3 nm ± 10 nm
Output Power is 10 W
Slope Efficiency is 4.7
Connector is SMA-905
Diameter Core is 375 um
Numeric Aperture is 0.22

Applications / Markets

Comparison table

This table shows products at the same center wavelength, including by other manufacturers.

Displaying 1-10 of 2291 results.

Manufacturer	Model	Wavelength	Output Power	Type	Package
Quantel	QD-Q1201-BO	808 nm +/-3 nm	60 W	FP Laser Diode	Stacked Array
Quantel	QD-Q1202-BO	808 nm +/-3 nm	120 W	FP Laser Diode	Stacked Array
Quantel	QD-Q1203-BO	808 nm +/-3 nm	180 W	FP Laser Diode	Stacked Array
Quantel	QD-Q1204-BO	808 nm +/-3 nm	240 W	FP Laser Diode	Stacked Array
Quantel	QD-Q1205-BO	808 nm +/-3 nm	300 W	FP Laser Diode	Stacked Array
Quantel	QD-Q1206-BO	808 nm +/-3 nm	360 W	FP Laser Diode	Stacked Array
Quantel	QD-Q1207-BO	808 nm +/-3 nm	420 W	FP Laser Diode	Stacked Array
Quantel	QD-Q1208-BO	808 nm +/-3 nm	480 W	FP Laser Diode	Stacked Array
Quantel	QD-Q1209-BO	808 nm +/-3 nm	540 W	FP Laser Diode	Stacked Array
Quantel	QD-Q1210-BO	808 nm +/-3 nm	600 W	FP Laser Diode	Stacked Array