660 nm 800 mW FP Laser Diode « K660E09FN-0.80W »

Manufacturer :

BWT Beijing Ltd.

Series :

K660E09FN

Model :

K660E09FN-0.80W

Code:

P936

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Summary

Low Power Red Laser Diode - K660E09FN-0.80W has the following features: Wavelength is 660 nm, Output Power is 800 mW, FP Laser Diode, Module, and more.

Features

Type (*) is FP Laser Diode
Package (*) is Module , 9-Pin , HHL
Wavelength (*) is 660 nm ± 5 nm
Output Power is 800 mW
Spectral Width is <3 nm
Slope Efficiency is 0.7-0.8
Connector is SMA-905
Diameter Core is 105/200 um
Numeric Aperture is 0.22

Applications / Markets

Comparison table

This table shows products at the same center wavelength, including by other manufacturers.

Displaying 1-10 of 59 results.

Manufacturer	Model	Wavelength	Output Power	Type	Package
QDLaser	QLF063X	660 nm	50 mW	FP Laser Diode	TO-can
QDLaser	QLF063X	660 nm	100 mW	FP Laser Diode	TO-can
QDLaser	QLF063X	660 nm	120 mW	FP Laser Diode	TO-can
RPMC Lasers	LDX-3230-660	660 nm	2 W	-	C-mt
RPMC Lasers	LDX-3230-660	660 nm	2 W	-	B-mt
RPMC Lasers	LDX-3230-660	660 nm	2 W	-	Q-mt
RPMC Lasers	LDX-3230-660	660 nm	2 W	-	TO-can
RPMC Lasers	LDX-3230-660	660 nm	2 W	-	TO-can
RPMC Lasers	LDX-3230-660	660 nm	2 W	-	TO-3/TEC
RPMC Lasers	LDX-3230-660	660 nm	2 W	-	HHL