660 nm 800 mW FP Laser Diode « K660E09FN-0.80W »

Manufacturer :

BWT Beijing Ltd.

Series :

K660E09FN

Model :

K660E09FN-0.80W

Code:

P936

For more information

Product page
Contact
At the time of an inquiry,
please write
"from Laser Diode Selection"

Summary

Low Power Red Laser Diode - K660E09FN-0.80W has the following features: Wavelength is 660 nm, Output Power is 800 mW, FP Laser Diode, Module, and more.

Features

Type (*) is FP Laser Diode
Package (*) is Module , 9-Pin , HHL
Wavelength (*) is 660 nm ± 5 nm
Output Power is 800 mW
Spectral Width is <3 nm
Slope Efficiency is 0.7-0.8
Connector is SMA-905
Diameter Core is 105/200 um
Numeric Aperture is 0.22

Applications / Markets

Comparison table

This table shows products at the same center wavelength, including by other manufacturers.

Displaying 1-10 of 59 results.

Manufacturer	Model	Wavelength	Output Power	Type	Package
Thorlabs USA	HL6544FM	660 nm	50 mW	MQW Laser Diode	TO-can
Thorlabs USA	HL6548FG	660 nm	90 mW	FP Laser Diode	TO-can
Thorlabs USA	HL6545MG	660 nm	120 mW	MQW Laser Diode	TO-can
Thorlabs USA	ML101J27	660 nm	120 mW	FP Laser Diode	TO-can
BWTBeijing	K660E03SN-0.00…	660 nm +/-5 nm	5 mW	FP Laser Diode	Module
BWTBeijing	K660E03SN-0.02W	660 nm +/-5 nm	20 mW	FP Laser Diode	Module
BWTBeijing	K660E03SN-0.04W	660 nm +/-5 nm	40 mW	FP Laser Diode	Module
BWTBeijing	K660E03FN-0.01W	660 nm +/-5 nm	10 mW	FP Laser Diode	Module
BWTBeijing	K660E03FN-0.06W	660 nm +/-5 nm	60 mW	FP Laser Diode	Module