850 nm 2.5 mW VCSEL  « APA4301040001 »

APA4301040001
Manufacturer :

Series :
10G Array Dual Top Contact

Model :
APA4301040001

Code:
P422

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Summary

Low Power NIR Laser Diode - APA4301040001 has the following features: Wavelength is 850 nm, Output Power is 2.5 mW, VCSEL, Chip Array, and more.

Features

  • Type (*) is VCSEL
  • Package (*) is Chip Array
  • Wavelength (*) is 850 nm
  • Output Power is 2.5 mW
  • Spectral Width is <0.65 nm
  • Slope Efficiency is 0.5
  • RoHS

Comparison table

This table shows products at the same center wavelength, including by other manufacturers.
Displaying 1-10 of 75 results.
Manufacturer Model Wavelength Output Power Type Package
OSI Laser DiodeCVD90-TO18C850 nm5 WFP Laser Diode TO18Coax
OSI Laser DiodeCVD90-TO18T850 nm5 WFP Laser Diode TO18 TwinLead
OSI Laser DiodeCVD90-TO5C850 nm5 WFP Laser Diode TO5Coax
OSI Laser DiodeCVD90-TO5F850 nm5 WFP Laser Diode TO5Non-Hermetic (fibered)
OSI Laser DiodeCVD90-TO5T850 nm5 WFP Laser Diode TO5 TwinLead
OSI Laser DiodeCVD90-90850 nm5 WFP Laser Diode TO-can
OSI Laser DiodeCVD93-TO18C850 nm10 WFP Laser Diode TO18Coax
OSI Laser DiodeCVD93-TO18T850 nm10 WFP Laser Diode TO18 TwinLead
OSI Laser DiodeCVD93-TO5C850 nm10 WFP Laser Diode TO5Coax
OSI Laser DiodeCVD93-TO5F850 nm10 WFP Laser Diode TO5Non-Hermetic (fibered)