1.03 um 80 W SQW Laser Diode  « OPC1030-80C-660F »

OPC1030-80C-660F
Manufacturer :
II-VI Laser Enterprise GmbH

Series :
OPCxxxx-80C-660

Model :
OPC1030-80C-660F

Code:
P302

For more information

Summary

High Power NIR Laser Diode - OPC1030-80C-660F has the following features: Wavelength is 1.03 um, Output Power is 80 W, SQW Laser Diode, Submount, and more.

Features

  • Type (*) is SQW Laser Diode
  • Package (*) is Submount
  • Wavelength (*) is 1.03 um ± >5 nm
  • Output Power is 80 W
  • Spectral Width is 3 nm
  • Polarization Mode
  • Slope Efficiency is 1.1
  • Pulse
  • RoHS

Applications / Markets

Comparison table

This table shows products at the same center wavelength, including by other manufacturers.
Displaying 1-10 of 30 results.
Manufacturer Model Wavelength Output Power Type Package
II-VI Laser EnterpriseOPC1030-80C-66…1.03 um +/->5 nm80 WSQW Laser Diode Submount
II-VI Laser EnterpriseOPC1030-80C-66…1.03 um +/- ≤5 nm80 WSQW Laser Diode Submount
II-VI Laser EnterpriseOPC1030-80C-66…1.03 um +/-≤3 nm80 WSQW Laser Diode Submount
II-VI Laser EnterpriseOPC1030-80C-66…1.03 um +/- ≤5 nm80 WSQW Laser Diode Submount
II-VI Laser EnterpriseOPC1030-80C-66…1.03 um +/-≤3 nm80 WSQW Laser Diode Submount
II-VI Laser EnterpriseOPC1030-80C-66…1.03 um +/->5 nm80 WSQW Laser Diode Submount
II-VI Laser EnterpriseOPC1030-80C-66…1.03 um +/- ≤5 nm80 WSQW Laser Diode Submount
II-VI Laser EnterpriseOPC1030-80C-66…1.03 um +/-≤3 nm80 WSQW Laser Diode Submount
II-VI Laser EnterpriseLC96A1030NBFBG…1.03 um +/-1 nm350 mWFP Laser Diode Module