808 nm 2 kW FP Laser Diode  « GH10 »

GH10
Manufacturer :

Series :
PulseLife G-stack

Model :
GH10

Code:
P27966

For more information

Summary

High Power NIR Laser Diode - GH10 has the following features: Wavelength is 808 nm, Output Power is 2 kW, FP Laser Diode, Stack, and more.

Features

  • Type (*) is FP Laser Diode
  • Package (*) is Stack , G-stack
  • Wavelength (*) is 808 nm ± 3 nm
  • Output Power is 2 kW
  • Spectral Width is <3 nm
  • CW Pulse
  • PRR is ≤0.0005 Hz

Comparison table

This table shows products at the same center wavelength, including by other manufacturers.
Displaying 1-10 of 2291 results.
Manufacturer Model Wavelength Output Power Type Package
Northrop GrummanARR01C060808 nm +/-3 nm60 WFP Laser Diode Array
Northrop GrummanARR01C120808 nm +/-3 nm120 WFP Laser Diode Array
Northrop GrummanARR01C120-H808 nm +/-3 nm120 WFP Laser Diode Array
Northrop GrummanARR01P600808 nm +/-3 nm600 WFP Laser Diode Array
Northrop GrummanARR01P900808 nm +/-3 nm900 WFP Laser Diode Array
Northrop GrummanARR01P1200808 nm +/-3 nm1.2 kWFP Laser Diode Array
Northrop GrummanARR01P1800808 nm +/-3 nm1.8 kWFP Laser Diode Array
Northrop GrummanARR01P2400(12B…808 nm +/-3 nm2.4 kWFP Laser Diode Array
Northrop GrummanARR01P2400(24B…808 nm +/-3 nm2.4 kWFP Laser Diode Array
Northrop GrummanARR01P3600808 nm +/-3 nm3.6 kWFP Laser Diode Array