835 nm-865 nm 100 mW FP Laser Diode  « L850P100 »

L850P100
Manufacturer :

Series :
NIR Laser Diodes

Model :
L850P100

Code:
P12429

For more information

Summary

Low Power NIR Laser Diode - L850P100 has the following features: Wavelength is 850 nm (835 nm - 865 nm), Output Power is 100 mW, FP Laser Diode, TO-can, and more.

Features

  • Type (*) is FP Laser Diode
  • Package (*) is TO-can , TO-18 , 5.6mm
  • Wavelength (*) is 850 nm : 835 nm - 865 nm
  • Output Power is 100 mW
  • Slope Efficiency is 0.7
  • RoHS

Comparison table

This table shows products at the same center wavelength, including by other manufacturers.
Displaying 1-10 of 75 results.
Manufacturer Model Wavelength Output Power Type Package
EagleyardEYP-RWL-0850-0…850 nm100 mWFP Laser Diode SOT
II-VI Laser EnterpriseAPA8101013512850 nm-VCSEL TO-can
II-VI Laser EnterpriseAPA8201010005850 nm-VCSEL Chip
II-VI Laser EnterpriseAPA8601010001850 nm-VCSEL Chip
II-VI Laser EnterpriseAPA7601040000850 nm2.5 mWVCSEL Chip Array
II-VI Laser EnterpriseAPA7601120000850 nm2.5 mWVCSEL Chip Array
II-VI Laser EnterpriseAPA7501010005850 nm2.5 mWVCSEL Chip Array
II-VI Laser EnterpriseAPA4301040001850 nm2.5 mWVCSEL Chip Array
II-VI Laser EnterpriseAPA4301120001850 nm2.5 mWVCSEL Chip Array
II-VI Laser EnterpriseAPA7301040000850 nm2.5 mWVCSEL Chip Array