News about laser diodes
Displaying 451-500 of 921 results.
springer.com
Date: Jul 12, 2016
Nanostructured zinc oxide material is usable in electronic device applications such as light-emitti…
OSA Publishing
Date: Jul 11, 2016
Low threshold continuous-wave (CW) lasing of current injected InGaN quantum dot (QD) vertical-cavit…
AIP Publishing
Date: Jul 7, 2016
The dynamic spectral properties of semiconductor lasers during its tuning are very important for fr…
springer.com
Date: Jul 6, 2016
A theoretical study of the optical gain and the line-width enhancement factor (α-parameter) in cubi…
IOPscience
Date: Jul 6, 2016
To investigate the irradiation effect of polarization direction and the intensity of a semiconducto…
IEEE
Date: Jul 6, 2016
Stable laser light sources are necessary for atom interferometry based experiments on space platfor…
SPIE
Date: Jul 5, 2016
External quantum efficiency (EQE) is a parameter widely used in various photonic devices. In laser …
IOPscience
Date: Jul 4, 2016
We present a compact atom interferometer based on 87Rb atoms that can simultaneously measure rotati…
IEEE
Date: Jul 3, 2016
Output power stabilization of 14xx-nm high power semiconductor laser is achieved by using single fi…
OSA Publishing
Date: Jul 1, 2016
A highly detailed and extended map of low-frequency fluctuations is established for a high-power mu…
OSA Publishing
Date: Jul 1, 2016
A linearized intensity modulator for periodic and pulsed light is proposed and demonstrated. The fr…
OSA Publishing
Date: Jul 1, 2016
By exploiting the inherent characteristics of dark-state resonators, we experimentally realize a si…
springer.com
Date: Jul, 2016
We propose a grating semi-feedback external cavity (GSFEC) scheme for high-power broad-area laser d…
OSA Publishing
Date: Jul, 2016
We discuss the development of an 1140 nm Vertical External Cavity Surface Emitting Laser (VECSEL) f…
ScienceDirect
Date: Jul, 2016
We report on a theoretical and computational investigation of the complex dynamics that arise in a …
IEEE
Date: Jun 30, 2016
The modulation characteristics of high-performance In0.1Ga0.9N/GaN continuous-wave (CW) ridge laser…
IEEE
Date: Jun 30, 2016
Abstract:
Summary form only given. To confirm the feasibility of our proposed current driven photo…
IEEE
Date: Jun 30, 2016
Summary form only given. We present advances in the performance and characterization of semipolar (…
IEEE
Date: Jun 30, 2016
Summary form only given. We report the first GaSb-based laser monolithically grown on Silicon subst…
IEEE
Date: Jun 30, 2016
Heteroepitaxial, or metamorphic, growth enables us to overcome limitations on the performance of se…
OSA Publishing
Date: Jun 30, 2016
Recently, there has been tremendous interest in excitable optoelectronic devices and in particular …
springer.com
Date: Jun 30, 2016
The prevalence of peri-implantitis and the absence of a standard approach for decontamination of th…
J-STAGE
Date: Jun 30, 2016
Objectives: The introduction of diode lasers in dentistry had several advantages, principally consi…
OSA Publishing
Date: Jun 27, 2016
In this contribution we experimentally demonstrate the change and improvement of dynamical properti…
IEEE
Date: Jun 20, 2016
In this paper, we propose and experimentally demonstrate an underwater wireless optical communicati…
springer.com
Date: Jun 17, 2016
The spectral characteristics of a high-power semiconductor laser with an external cavity in which l…
OSA Publishing
Date: Jun 15, 2016
We experimentally demonstrate a key exchange cryptosystem based on the phenomenon of identical chao…
Nature Publishing Group
Date: Jun 15, 2016
In semiconductor lasers, current injection not only provides the optical gain, but also induces var…
IEEE
Date: Jun 15, 2016
The synchronization properties and the sensitivity of generalized lag synchronization (GLS) in all-…
AIP Publishing
Date: Jun 14, 2016
The formation of cleaved mirror facets of GaN-based laser diodes on c-plane GaN substrates is inves…
OSA Publishing
Date: Jun 10, 2016
Single frequency and low linewidth (<1MHz) Al-free active region diode laser at 894nm, design-co…
OSA Publishing
Date: Jun 10, 2016
We demonstrate a compact, all-room-temperature CW white-light laser source based on nonlinear frequ…
OSA Publishing
Date: Jun 10, 2016
We present a compact mode-locked diode laser designed to generate a frequency comb in the wavelengt…
OSA Publishing
Date: Jun 10, 2016
An order-of-magnitude frequency noise reduction of a low cost tuneable semiconductor laser is prese…
OSA Publishing
Date: Jun 10, 2016
An ECDL is demonstrated using a Bragg grating written into an integrated optical fiber (IOF) platfo…
OSA Publishing
Date: Jun 10, 2016
Narrow-stripe (30 µm aperture) broad area lasers with monolithically integrated DFB-surface-grating…
the Optoelectronics Company Ltd
Date: Jun 6, 2016
The Optoelectronics Company, global expert in the design and manufacture of laser diode
collimator…
SPIE
Date: Jun 3, 2016
We report the development of an intracavity-frequency-doubled vertical external-cavity surface-emit…
ScienceDirect
Date: Jun 1, 2016
A signal-processing synthesizing Wavelet transform and Hilbert transform is employed to measurement…
OSA Publishing
Date: Jun 1, 2016
Polarization switching in a long-wavelength vertical-cavity surface-emitting laser (VCSEL) under pa…
IEEE
Date: May 30, 2016
The ceramic multilayer technology “Low Temperature Cofired Ceramics” (LTCC) provides, thanks to its…
AIP Publishing
Date: May 24, 2016
In this paper, we investigate theoretically the stabilization of a free-running vertical-cavity sur…
IEEE
Date: May 23, 2016
Traditional methane detection techniques in power transformer oil have the problems of cross sensit…
IEEE
Date: May 21, 2016
True or physical random number generation (RNG) is vital to supply keys for information security. C…
IOPscience
Date: May 19, 2016
An epitaxially grown GaInAsP/InP double-hetero laser diode (LD) has been demonstrated on a wafer-bo…
Royal Society of Chemistry
Date: May 18, 2016
We developed a two-step facet etching method combining inductively coupled plasma etching and KOH-b…
AIP Publishing
Date: May 16, 2016
The differential resistance curves of GaAs- and GaN-based laser diodes(LDs) are experimentally and …
IEEE
Date: May 9, 2016
We report recent results on THz lasing in PbSnSe and HgCdTe. The wavelength of 46.3 microns was ach…
Ingenta
Date: May 5, 2016
Surface morphology changes and transient reflectance changes at diode laser facets are monitored du…
SPIE
Date: May 2, 2016
We report a low-cost compact diffuse speckle contrast flowmeter (DSCF) consisting of a small laser …
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