Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate 
Date: Nov, 2017
InGaAs/GaAs/AlGaAs laser diodes with quantum wells are grown by the metal-organic chemical vapor deposition (MOCVD) method on an exact Si (001) substrate with a Ge buffer layer. The diodes generate stimulated emission in the pulsed mode at room temperature in the spectral range from 1.09 to 1.11 μm.