Strong doping of the n-optical confinement layer for increasing output power of high-power pulsed laser diodes in the eye safe wavelength range open site


Date: Oct 31, 2017
Strong doping of the n-optical confinement layer for increasing output power of high-power pulsed laser diodes in the eye safe wavelength range

An analytical model for internal optical losses at high power in a 1.5 μm laser diode with strong n-doping in the n-side of the optical confinement layer is created. The model includes intervalence band absorption by holes supplied by both current flow and two-photon absorption (TPA), as well as the direct TPA effect. The resulting losses are compared with those in an identical structure with a weakly doped waveguide, and shown to be substantially lower, resulting in a significant improvement in the output power and efficiency in the structure with a strongly doped waveguide.

Application: Others,Processing