Design optimization for 25 Gbit/s DML InGaAlAs/InGaAsP/InP SL-MQW laser diode incorporating temperature effect

In this paper, a detailed carrier dynamics model for quantum well lasers is used to study the modulation bandwidth of the directly modulated strained-layer multiple quantum well (SL-MQW) laser. The active region of the directly modulated laser (DML) is optimized in terms of the number of QWs and barrier height. To compromise the device dynamic performance at different operating temperatures, we present an overall optimized design for a 25 Gbps DML under an ambient temperature ranging from 25 to 85°C. To further enhance the modulation bandwidth, we have also proposed a mixed QWs design that increases the 3 dB bandwidth by almost 44% compared to the one without undergoing optimization. The experimental results show that the 3 dB bandwidth of the optimized DML can reach 19 GHz. A clear eye diagram with a bit rate of 25 Gbps was observed at 25°C.