1.5 μm Laser Diode on InP/Si substrate by Epitaxial Growth using Direct Bonding Method 
Date: May 14, 2017
we have demonstrated for the first time 1.5μm GaInAsP laser diode on silicon substrate using direct wafer bonding and MOVPE growth. Our unique approach prior to the growth is that we do the adhesion of InP substrate and Si substrate using hydrophilic wafer bonding technique.