Optical Gain in Type-II InAsN/GaSb Strained Quantum Wells Laser Diodes and Its Pressure Dependence

In this work, we have reported theoretical analysis of the optical gain and its pressure dependence of type-II InAs0.98N0.02/GaSb strained QW laser structures grown on [001] and [111] substrates. The originality of this paper deals with the hydrostatic pressure related effects on the wavelength emission for oriented MIR type-II InAsN/GaSb strained QW laser diode since it has never been studied or reported in the literature with the 16?16 k.p Hamiltonian. This 16 k.p model has provided valuable insight into the optoelectronic properties of InAsN/GaSb QW laser diode and it has been successfully used in this work to accurately model the optical transitions and threshold current density, as well as optical gain. In order to relieve the computational task of the band structure calculation, we have used a unitary transformation that block diagonalizes the 16?16 Hamiltonian into two 8?8 blocks that are real symmetric in the finite difference.