Lasing characteristics of GaInAsP laser diode grown on directly bonded InP/Si substrate

We have successfully obtained lasing characteristics of GaInAsP double-hetero laser diode grown on directly bonded InP/Si substrate through the InP-Si interface carrier injection. Directly bonded InP/Si substrate was prepared by 1μm thickness InP and Si substrate. Threshold current and spectrum of laser diode on InP/Si and InP substrate are discussed.