Molecular beam epitaxial growth of 3µm mid-wave infrared laser using InGaAsSb/AlInAsSb quantum well structure

We report the experimental results of growth and characterization of InGaAsSb/AlInAsSb quantum well laser structure. The epitaxial structure was grown using molecular beam epitaxy system on GaSb substrate and characterized using a 2µm pump source. We observed 3.1µm laser emission at 200K and 2.98µm laser emission near 100K.