Design Optimization for 25Gbps DML InAlGaAs/InP SL-MQW Laser Diode open site


Date: Nov 2, 2016
Design Optimization for 25Gbps DML InAlGaAs/InP SL-MQW Laser Diode

A full physics based model has been exploited to systematically study the modulation bandwidth of the directly modulated Strained-Layer Multiple Quantum Well (SL-MQW) laser. The major parameters of the active region are optimized to achieve the maximum modulation bandwidth under an ambient temperature ranging from 25°C to 85°C.

Application: Others