Growth of laser diode structures with emission wavelength beyond 1100 nm for yellow-green emission by frequency conversion

Laser structures for emission wavelengths of 1120 nm and 1180 nm, suitable for non-linear frequency conversion to yellow-green and yellow-orange, were developed. At 1120 nm emission wavelength different active regions and structures were investigated. The introduction of a GaAs spacer layer between GaAsP barriers and InGaAs QWs reduces threshold and transparency current density significantly. Lifetime measurements were done successfully over 1700 h for broad area and 10000 h for ridge waveguide tapered lasers. Broad area laser diodes with a partly strain-compensated 6 nm InGaAs QW, emitting at 1180 nm, show lifetimes above 1000 h at an output power of 1.5 W. The required beam quality was achieved by processing a ridge waveguide laser with an included distributed Bragg reflector. Such a laser emits up to 200 mW in single mode output power. Keywords: Interfaces, Metalorganic vapor phase epitaxy, Quantum wells, Semiconducting III-V materials, Laser diodes