GaSb lasers grown on Silicon substrate emitting in the telecom wavelength range

Summary form only given. We report the first GaSb-based laser monolithically grown on Silicon substrate working in CW mode at room temperature with an emission in the telecom wavelength range. We will present the laser design, Silicon ex-situ preparation, technology process and electro-optics characterization. Broad-area laser diodes exhibit threshold-current densities 700 A/cm2. 10 μm × 1 mm diodes operate up to above 35 °C under continuous wave operation with an emission wavelength at 1.59 μm.