Realization of band gap shrinkage to the spectral characteristics of high-luminous-efficiency 658 nm AlGaInP/GaInP multiple quantum well lasers at room temperatures

The temperature dependent spectral shifts in 658 nm AlGaInP multiple quantum well (MQW) red laser diodes due to band gap narrowing at room temperatures (5 °Csingle bond45 °C) is reported. The density of states effective mass approximation and the conduction band effective mass approximation are employed to formulate the carrier concentrations. The spectral shift mechanism is explored with a threshold current density of 42.28 kA/cm2 and a good characteristic temperature of 149 K. The photoluminescence (PL) peak intensity shifts towards the higher wavelength(red shift) and the full width at half maximum (FWHM) increases with the increase in temperature. The band gap narrowing value determined by a simple formula amounts to 67.4 meV and displays N1/3 dependence at higher densities. The carrier density dependence conveys that the red shift of the spectral emission is due to band gap narrowing.