Spectral changes due to carrier induced band gap shrinkage for 675 nm AlGaInP multiple quantum well (MQW) laser diodes at room temperatures

Spectral changes due to carrier induced band gap shrinkage for 675 nm AlGaInP multiple quantum well (MQW) laser diodes are studied at room temperatures (10–40) °C. The intensity peak shifted toward the lower energy and the full width at half maximum (FWHM) increases with the increase in temperature from 10 °C to 40 °C. The density of states effective mass approximation is employed to calculate the carrier concentrations. The bandgap shrinkage value amounts to 47.70 meV and shows N1/3 dependence for higher concentrations. Through this it is observed that higher wavelength shifting of the spectral emission is due to the carrier induced band gap shrinkage. The spectral wavelength shift is interrogated with a low threshold current density of 6.28 kA/cm2.