Enhanced temperature characteristic of InGaN/GaN laser diodes with uniform multiple quantum wells

Temperature-dependent electroluminescence (EL) of two high-power blue InGaN/GaN laser diodes (LDs) is studied. An enhanced temperature characteristic is observed in one LD, having a smaller Shockley–Read–Hall non-radiative recombination coefficient and a smaller full-width-at-half-maximum (FWHM) of the spontaneous EL spectra. The scanning transmission electron microscopy image of this LD shows a better uniformity of the multiple quantum wells (MQWs), indicating that the uniform MQWs contribute to the stable temperature characteristic of the LD.