Edge-emitting semiconductor laser subject to nonsinusoidal excitation from three-dimensional autonomous system: numerical and electronic models analysis

The edge-emitting semiconductor laser powered by Sifeu et al. oscillator is studied numerically. An electronic/analog model of the system is constructed in order to imitate the behavior of the material model. Period-doubling to chaos, is obtained when varying the amplitude of the reverse bias saturation current. The experimental results show agreement with those obtained numerically.