InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal–organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 °C, exhibit state-of-the-art electrical characteristics and prevent the indium-rich quantum wells from thermal degradation. Narrow ridge-waveguide lasers with high-reflectivity coatings show a threshold current density of 9.7 kAcenterdotcm−2, a threshold voltage of 5.4 V, and a lasing wavelength of 501 nm. The internal optical loss and material gain of the epitaxial structures are also measured and discussed.