Research on the high indium content InGaAs multiple quantum wells wafers for λ>1.55μm laser diodes

The effects of TMIn flow rate and AsH3 flow rate on the photoluminescence spectra of the high indium content InGaAs multiple quantum wells for λ>1.55μm laser diodes have been investigated both experimentally and theoretically. The wavelength peak red-shifted about 4.8nm for increasing 1sccm H2 flow rate through TMIn under a AsH3 flow rate of 150sccm, while the wavelength shift increases to 6.5nm at a higher AsH3 flow rate of 300sccm. Results show that more AsH3 flow rate will promote much TMGa pyrolysis than TMIn in the high indium content InGaAs growth. Considering the influence of growth parameters, the longest wavelength of 1.889μm among the InGaAs/InGaAsP strained MQWs samples was obtained with high crystal quality.