SEMICONDUCTOR LASER open site


Date: Jan 1, 2015

An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxGa1-x)0.5In0.5P (0.9

Application: Others